Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with a Thin SiO 2 Layer

An investigation of Si ion implantation into Si single crystals covered with a SiO 2 layer of various thicknesses (1000–3000 Å) was conducted and new characteristic luminescence bands were observed. A visible band that peaked around 1.89 or 2.0 eV was observed from the as-implanted samples. After hi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-08, Vol.36 (8A), p.L1019
Main Authors: Lan, Aidong, Baixin Liu, Baixin Liu, Xinde Bai, Xinde Bai
Format: Article
Language:English
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Summary:An investigation of Si ion implantation into Si single crystals covered with a SiO 2 layer of various thicknesses (1000–3000 Å) was conducted and new characteristic luminescence bands were observed. A visible band that peaked around 1.89 or 2.0 eV was observed from the as-implanted samples. After high temperature post annealing, a visible band located in the range of 1.7 eV was detected. Interestingly, a new luminescence band around 1.5 eV was observed, for the first time, in a sample covered with a 3000 Å SiO 2 layer, after high dose implantation and annealing. We report, in this letter, the experimental results and a brief discussion concerning the various possible mechanisms responsible for the observed luminescence bands.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.L1019