Photoluminescence and Raman Spectral Study of Porous Si during F 2 Exposure

Visible luminescence and Raman spectral changes of porous Si (PS) during F 2 exposure were recorded. F 2 exposure of the PS under Ar + laser light (488 nm) irradiation at 373 K leads to a significant spectral change of photoluminescence (PL). During an early stage of the exposure, the PL band of the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-03, Vol.36 (3B), p.L313
Main Authors: Toshimasa Wadayama, Toshimasa Wadayama, Tsuyoshi Arigane, Tsuyoshi Arigane, Katsuhiko Hujine, Katsuhiko Hujine, Aritada Hatta, Aritada Hatta
Format: Article
Language:English
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Summary:Visible luminescence and Raman spectral changes of porous Si (PS) during F 2 exposure were recorded. F 2 exposure of the PS under Ar + laser light (488 nm) irradiation at 373 K leads to a significant spectral change of photoluminescence (PL). During an early stage of the exposure, the PL band of the 750 nm peak decreased in intensity and a new band emerged at 600 nm. After 30 min, the new band dominated the spectrum while the band at 750 nm almost disappeared. On the contrary, the phonon band due to nanosize Si crystals of the PS remained unchanged. These results suggest that the PL spectral change arises due to a change in the chemical structure of the sample surface.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.L313