Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form ato...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-03, Vol.36 (3B), p.L361
Main Authors: Taro Hitosugi, Taro Hitosugi, Tomihiro Hashizume, Tomihiro Hashizume, Seiji Heike, Seiji Heike, Satoshi Watanabe, Satoshi Watanabe, Yasuo Wada, Yasuo Wada, Tetsuya Hasegawa, Tetsuya Hasegawa, Koichi Kitazawa, Koichi Kitazawa
Format: Article
Language:English
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Summary:Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.L361