Selective self-formation of InAs quantum dots on strained InGaAs layers by molecular beam epitaxy

InAs was grown on a strained InGaAs/GaAs(001) layer by molecular beam epitaxy. The critical thickness and the dot structure of the InAs were investigated as a function of the thickness of the InGaAs base layer. The critical thickness of the InAs layer increased with decreasing residual strain of the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-07, Vol.36 (7A), p.L871-L873
Main Authors: YAMAGUCHI, K, WAKI, E, HASEGAWA, H
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:InAs was grown on a strained InGaAs/GaAs(001) layer by molecular beam epitaxy. The critical thickness and the dot structure of the InAs were investigated as a function of the thickness of the InGaAs base layer. The critical thickness of the InAs layer increased with decreasing residual strain of the InGaAs surface. Chains of self-formed InAs dots were partially observed along the [110] direction. This selective self-formation of InAs dots was caused by a strain distribution and an anisotropy of the residual strain on the InGaAs surface.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.L871