Precipitation of Boron in Highly Boron-Doped Silicon

The clustering of boron in highly boron-doped silicon and its influence on electrical deactivation are reported. Highly boron-doped crystalline silicon was fabricated as a starting material by solid phase epitaxy of boron-doped amorphous silicon films. Boron can be supersaturated in the crystallized...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-03, Vol.37 (3S), p.1171
Main Authors: Mizushima, Ichiro, Mitani, Yuichiro, Koike, Mitsuo, Yoshiki, Masahiko, Tomita, Mitsuhiro, Kambayashi, Sigeru
Format: Article
Language:English
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Summary:The clustering of boron in highly boron-doped silicon and its influence on electrical deactivation are reported. Highly boron-doped crystalline silicon was fabricated as a starting material by solid phase epitaxy of boron-doped amorphous silicon films. Boron can be supersaturated in the crystallized samples annealed at a low temperature of about 600°C. A lot of precipitates, containing clustered boron, were observed in the samples annealed at high temperatures of about 1000°C. The chemical states and the atomic configuration of boron in samples annealed at various temperatures corresponded to the electrical deactivation of boron.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.1171