The Effect of Different Group V Precursors on the Evolution of Quantum Dots Monitored by Optical In Situ Measurements

The influence of different As-precursors [TMAs (trimethylarsine), TBAs (tertiarybutylarsine) and AsH 3 (arsine)] on the formation of InAs-quantum-dots and their evolution was studied by applying reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE). Hydrogen radicals at the s...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-03, Vol.37 (3S), p.1483
Main Authors: Elisabeth Steimetz, Elisabeth Steimetz, Wolfgang Richter, Wolfgang Richter, Frank Schienle, Frank Schienle, Daniel Fischer, Daniel Fischer, Michael Klein, Michael Klein, Jörg-Thomas Zettler, Jörg-Thomas Zettler
Format: Article
Language:English
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Summary:The influence of different As-precursors [TMAs (trimethylarsine), TBAs (tertiarybutylarsine) and AsH 3 (arsine)] on the formation of InAs-quantum-dots and their evolution was studied by applying reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE). Hydrogen radicals at the surface are found to enhance the ripening and coalescence processes. The use of TBAs instead of AsH 3 can partly reduce coalescence. Monitoring the GaAs overgrowth on InAs-quantum dots, the level of GaAs-covering was determined by RAS-measurements. Temperature dependent In-segregation effects were observed in situ .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.1483