A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-05, Vol.37 (5R), p.2439
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.2439