Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process

For a low-energy (

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-06, Vol.37 (6R), p.3268
Main Authors: Kumami, Hajime, Shindo, Wataru, Ino, Kazuhide, Ohmi, Tadahiro
Format: Article
Language:English
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Description
Summary:For a low-energy (
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.3268