Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

Chlorine-based dry etching of III/V compound semiconductors for optoelectronic applications has been reviewed. The advantages of the ultrahigh-vacuum (UHV)-based electron cyclotron resonance (ECR)-plasma reactive ion beam etching (RIBE) over conventional RF-plasma reactive ion etching (RIE) were emp...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-02, Vol.37 (2R), p.373
Main Authors: Asakawa, Kiyoshi, Yoshikawa, Takashi, Kohmoto, Shigeru, Nambu, Yoshihiro, Sugimoto, Yoshimasa
Format: Article
Language:English
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Summary:Chlorine-based dry etching of III/V compound semiconductors for optoelectronic applications has been reviewed. The advantages of the ultrahigh-vacuum (UHV)-based electron cyclotron resonance (ECR)-plasma reactive ion beam etching (RIBE) over conventional RF-plasma reactive ion etching (RIE) were emphasized as the capability to use carbon-free, chlorine (Cl 2 ) gas plasmas, controllability of ion energies and compatibility with other UHV-based chambers such as a molecular beam epitaxy (MBE) chamber. The RIBE technique was shown to exhibit excellent laser diode performances, such as extremely low threshold-current, high polarization-controllability and a lifetime of more than 3000 h for structures with more than 1-µm-wide etched-mesa width. The degree of etching-induced damage was evaluated in terms of the nonradiative surface recombination velocity S r and the possibilities of practical applications of the dry-etched devices were discussed using the S r values.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.373