Structural and Electrical Properties of Crystalline CeO 2 Films Formed by Metalorganic Decomposition

Crystalline CeO 2 films were formed on a Si (100) substrate by metalorganic decomposition at temparatures ranging from 600°C to 800°C. As-deposited films were in the amorphous state and were completely transformed to crystalline CeO 2 above 600°C. However, during crystallization in oxygen atomospher...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-07, Vol.37 (7R), p.4158
Main Authors: Fukuda, Hisashi, Miura, Miho, Sakuma, Shigeyuki, Nomura, Shigeru
Format: Article
Language:English
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Summary:Crystalline CeO 2 films were formed on a Si (100) substrate by metalorganic decomposition at temparatures ranging from 600°C to 800°C. As-deposited films were in the amorphous state and were completely transformed to crystalline CeO 2 above 600°C. However, during crystallization in oxygen atomosphere, a reaction between CeO 2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO 2 layer. Capacitance-voltage measurement on these films showed good dielectric properties with a dielectric constant of 15, which is more than three times higher than that of SiO 2 . The modified structure of CeO 2 /SiO 2 /Si is expected to be suitable for the dielectric layer in an integrated circuit, in place of conventional dielectric films such as those of SiO 2 or Si 3 N 4 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.4158