Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation

Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-10, Vol.37 (10R), p.5614
Main Authors: Ma, Jin, Zhang, Dehang, Li, Shuying, Zhao, Junqing, Ma, Honglei
Format: Article
Language:English
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Summary:Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity as low as 7×10 -4 Ω·cm and transmittance over 80% have been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10–400 K. Corresponding scattering mechanism of charge carriers in the films have been discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.5614