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Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists
Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through th...
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Published in: | Japanese Journal of Applied Physics 1998-12, Vol.37 (12S), p.7148 |
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Language: | English |
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container_issue | 12S |
container_start_page | 7148 |
container_title | Japanese Journal of Applied Physics |
container_volume | 37 |
creator | Kim, Jinchul Oh, Young Shin, HaiwonLee SunwooPark, SunwooPark |
description | Atomic force microscope (AFM) has been used to investigate organosilane self-assembled
monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method.
Patterning was accomplished through the localized degradation of the monolayer as a result
of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the
protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm.
The pattern fabricated on the monolayer was transferred to the Si substrate by chemical
etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the
regions where the probe had passed, while the surrounding area remained unetched due to
the resistivity of the undegraded monolayer to the etching. |
doi_str_mv | 10.1143/JJAP.37.7148 |
format | article |
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monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method.
Patterning was accomplished through the localized degradation of the monolayer as a result
of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the
protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm.
The pattern fabricated on the monolayer was transferred to the Si substrate by chemical
etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the
regions where the probe had passed, while the surrounding area remained unetched due to
the resistivity of the undegraded monolayer to the etching.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.7148</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.7148</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</citedby><cites>FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kim, Jinchul</creatorcontrib><creatorcontrib>Oh, Young</creatorcontrib><creatorcontrib>Shin, HaiwonLee</creatorcontrib><creatorcontrib>SunwooPark, SunwooPark</creatorcontrib><title>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</title><title>Japanese Journal of Applied Physics</title><description>Atomic force microscope (AFM) has been used to investigate organosilane self-assembled
monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method.
Patterning was accomplished through the localized degradation of the monolayer as a result
of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the
protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm.
The pattern fabricated on the monolayer was transferred to the Si substrate by chemical
etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the
regions where the probe had passed, while the surrounding area remained unetched due to
the resistivity of the undegraded monolayer to the etching.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkF1PwyAUhonRxDq98wfwA6RCoYVd1sVNl-mMH7cSSmHDtKOB3vTfS6NXb86b55ycPADcEpwTwuj9dlu_5ZTnnDBxBjJCGUcMV-U5yDAuCGLLorgEVzH-pLEqGcnAdz363mm49kEb-OJ08FH7wcAHFU0LX9XJd248-kNQw3GC3sIP01lUx2j6pkvEPhwSE12nTmnfJ1xNJsB3E10c4zW4sKqL5uY_F-Br_fi5ekK7_eZ5Ve-QpoKMSHBTlRSz0lpMGk1JI3DZKK0w1SaFFi1XqWvYslVcc8pFqhhjWBSqqARdgLu_u_P_MRgrh-B6FSZJsJzdyNmNpFzObugvZ5NYlA</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Kim, Jinchul</creator><creator>Oh, Young</creator><creator>Shin, HaiwonLee</creator><creator>SunwooPark, SunwooPark</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981201</creationdate><title>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</title><author>Kim, Jinchul ; Oh, Young ; Shin, HaiwonLee ; SunwooPark, SunwooPark</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jinchul</creatorcontrib><creatorcontrib>Oh, Young</creatorcontrib><creatorcontrib>Shin, HaiwonLee</creatorcontrib><creatorcontrib>SunwooPark, SunwooPark</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jinchul</au><au>Oh, Young</au><au>Shin, HaiwonLee</au><au>SunwooPark, SunwooPark</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-12-01</date><risdate>1998</risdate><volume>37</volume><issue>12S</issue><spage>7148</spage><pages>7148-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Atomic force microscope (AFM) has been used to investigate organosilane self-assembled
monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method.
Patterning was accomplished through the localized degradation of the monolayer as a result
of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the
protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm.
The pattern fabricated on the monolayer was transferred to the Si substrate by chemical
etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the
regions where the probe had passed, while the surrounding area remained unetched due to
the resistivity of the undegraded monolayer to the etching.</abstract><doi>10.1143/JJAP.37.7148</doi></addata></record> |
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title | Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists |
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