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Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists

Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through th...

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Published in:Japanese Journal of Applied Physics 1998-12, Vol.37 (12S), p.7148
Main Authors: Kim, Jinchul, Oh, Young, Shin, HaiwonLee, SunwooPark, SunwooPark
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Language:English
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cited_by cdi_FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683
cites cdi_FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683
container_end_page
container_issue 12S
container_start_page 7148
container_title Japanese Journal of Applied Physics
container_volume 37
creator Kim, Jinchul
Oh, Young
Shin, HaiwonLee
SunwooPark, SunwooPark
description Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through the localized degradation of the monolayer as a result of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm. The pattern fabricated on the monolayer was transferred to the Si substrate by chemical etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the regions where the probe had passed, while the surrounding area remained unetched due to the resistivity of the undegraded monolayer to the etching.
doi_str_mv 10.1143/JJAP.37.7148
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_37_7148</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_37_7148</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</originalsourceid><addsrcrecordid>eNotkF1PwyAUhonRxDq98wfwA6RCoYVd1sVNl-mMH7cSSmHDtKOB3vTfS6NXb86b55ycPADcEpwTwuj9dlu_5ZTnnDBxBjJCGUcMV-U5yDAuCGLLorgEVzH-pLEqGcnAdz363mm49kEb-OJ08FH7wcAHFU0LX9XJd248-kNQw3GC3sIP01lUx2j6pkvEPhwSE12nTmnfJ1xNJsB3E10c4zW4sKqL5uY_F-Br_fi5ekK7_eZ5Ve-QpoKMSHBTlRSz0lpMGk1JI3DZKK0w1SaFFi1XqWvYslVcc8pFqhhjWBSqqARdgLu_u_P_MRgrh-B6FSZJsJzdyNmNpFzObugvZ5NYlA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</title><source>IOPscience journals</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Kim, Jinchul ; Oh, Young ; Shin, HaiwonLee ; SunwooPark, SunwooPark</creator><creatorcontrib>Kim, Jinchul ; Oh, Young ; Shin, HaiwonLee ; SunwooPark, SunwooPark</creatorcontrib><description>Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through the localized degradation of the monolayer as a result of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm. The pattern fabricated on the monolayer was transferred to the Si substrate by chemical etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the regions where the probe had passed, while the surrounding area remained unetched due to the resistivity of the undegraded monolayer to the etching.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.7148</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.7148</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</citedby><cites>FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kim, Jinchul</creatorcontrib><creatorcontrib>Oh, Young</creatorcontrib><creatorcontrib>Shin, HaiwonLee</creatorcontrib><creatorcontrib>SunwooPark, SunwooPark</creatorcontrib><title>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</title><title>Japanese Journal of Applied Physics</title><description>Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through the localized degradation of the monolayer as a result of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm. The pattern fabricated on the monolayer was transferred to the Si substrate by chemical etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the regions where the probe had passed, while the surrounding area remained unetched due to the resistivity of the undegraded monolayer to the etching.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkF1PwyAUhonRxDq98wfwA6RCoYVd1sVNl-mMH7cSSmHDtKOB3vTfS6NXb86b55ycPADcEpwTwuj9dlu_5ZTnnDBxBjJCGUcMV-U5yDAuCGLLorgEVzH-pLEqGcnAdz363mm49kEb-OJ08FH7wcAHFU0LX9XJd248-kNQw3GC3sIP01lUx2j6pkvEPhwSE12nTmnfJ1xNJsB3E10c4zW4sKqL5uY_F-Br_fi5ekK7_eZ5Ve-QpoKMSHBTlRSz0lpMGk1JI3DZKK0w1SaFFi1XqWvYslVcc8pFqhhjWBSqqARdgLu_u_P_MRgrh-B6FSZJsJzdyNmNpFzObugvZ5NYlA</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Kim, Jinchul</creator><creator>Oh, Young</creator><creator>Shin, HaiwonLee</creator><creator>SunwooPark, SunwooPark</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981201</creationdate><title>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</title><author>Kim, Jinchul ; Oh, Young ; Shin, HaiwonLee ; SunwooPark, SunwooPark</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jinchul</creatorcontrib><creatorcontrib>Oh, Young</creatorcontrib><creatorcontrib>Shin, HaiwonLee</creatorcontrib><creatorcontrib>SunwooPark, SunwooPark</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jinchul</au><au>Oh, Young</au><au>Shin, HaiwonLee</au><au>SunwooPark, SunwooPark</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-12-01</date><risdate>1998</risdate><volume>37</volume><issue>12S</issue><spage>7148</spage><pages>7148-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Atomic force microscope (AFM) has been used to investigate organosilane self-assembled monolayer films (SAMs) for nanometer-scale lithography. The octadecyldimethylmethoxysilane monolayer as a resist was prepared on a Si substrate by using the immersion method. Patterning was accomplished through the localized degradation of the monolayer as a result of anodic reaction induced by an AFM tip. When the negative bias voltage was 10–30 V, the protruding lines appeared in the exposed regions and the minimum linewidth was 70 nm. The pattern fabricated on the monolayer was transferred to the Si substrate by chemical etching in buffered oxide etch (BOE) solution. The etching proceeded area selectively in the regions where the probe had passed, while the surrounding area remained unetched due to the resistivity of the undegraded monolayer to the etching.</abstract><doi>10.1143/JJAP.37.7148</doi></addata></record>
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title Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T23%3A46%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atomic%20Force%20Microscope%20Based%20Nanolithography%20of%20Self-Assembled%20Organosilane%20Monolayer%20Resists&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kim,%20Jinchul&rft.date=1998-12-01&rft.volume=37&rft.issue=12S&rft.spage=7148&rft.pages=7148-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.37.7148&rft_dat=%3Ccrossref%3E10_1143_JJAP_37_7148%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c381t-87e653045ff01bc31b805baca03ceacac8d7ab80b49da7c7378c8d444082a2683%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true