Contact Structure for a Superconducting Field Effect Transistor Using SrTiO 3 /YBa 2 Cu 3 O 7- x Films

A contact structure for a superconducting field effect transistor (SuFET) was developed using a sequentially-deposited SrTiO 3 (STO)/YBa 2 Cu 3 O 7- x (YBCO) bilayer. A buried contact structure was proposed to contact the edge of the ultrathin YBCO layer of the STO/YBCO bilayer, which was used as a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-03, Vol.37 (3R), p.815
Main Authors: Inada, Hiroshi, Nakamura, Takao, Iiyama, Michitomo
Format: Article
Language:English
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Summary:A contact structure for a superconducting field effect transistor (SuFET) was developed using a sequentially-deposited SrTiO 3 (STO)/YBa 2 Cu 3 O 7- x (YBCO) bilayer. A buried contact structure was proposed to contact the edge of the ultrathin YBCO layer of the STO/YBCO bilayer, which was used as a channel layer of a SuFET. To reduce the contact resistance, focused ion beam (FIB) etching of the bilayer and in situ noble metal deposition were adopted. Specific contact resistance was reduced to 5×10 -8 Ω cm 2 for a 30-nm-thick YBCO film without annealing. Furthermore, annealing in ozone caused a reduction of specific contact resistance to 3×10 -8 Ω cm 2 for a 20-nm-thick YBCO film. This structure is useful to shrink the device dimensions and to improve the modulation characteristics of a SuFET.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.815