Silicon Crystal Growth under Equilibrium Condition of SiO 2 -Si–SiO System: Equilibrium Oxygen Segregation Coefficient

Single silicon crystals have been grown successfully under the equilibrium condition of a SiO 2 –Si–SiO system in a closed silica ampoule with a vertical directional freezing method. The oxygen concentration in the grown single crystals was obtained using Fourier transform infrared spectroscopy (FT-...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-12, Vol.37 (12B), p.L1504
Main Authors: Huang, Xinming, Nakazawa, Tatsuo, Terashima, Kazutaka, Hoshikawa, Keigo
Format: Article
Language:English
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Summary:Single silicon crystals have been grown successfully under the equilibrium condition of a SiO 2 –Si–SiO system in a closed silica ampoule with a vertical directional freezing method. The oxygen concentration in the grown single crystals was obtained using Fourier transform infrared spectroscopy (FT-IR) and secondary ion mass spectroscopy (SIMS) techniques as 1.7±0.1 (×10 18 atoms/cm 3 ). The equilibrium segregation coefficient of oxygen was obtained by comparing the oxygen concentration of the silicon crystal to the oxygen solubility in the silicon melt. The equilibrium oxygen segregation coefficient was, then, determined to be 0.8±0.1.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L1504