Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum

The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-12, Vol.37 (12B), p.L1509
Main Authors: Otsuka, Nobuyuki, Oyama, Yutaka, Kikuchi, Hideyuki, Nishizawa, Jun-ichi, Suto, Ken
Format: Article
Language:English
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Summary:The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, as described by a modified Langmuir-type equation. It is assumed that TBP adheres to the surface within 0.1 s even at an injection pressure of 3×10 -5 Torr and prevents phosphorus dissociation during evacuation times longer than 5 s. The activation energy of 18 kcal/mol (at 340–390°C) is lower than that using tris-dimethylaminophosphorus. A specular surface is obtained on a sulfur-doped substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L1509