Photoluminescence of a High Quality CuInSe 2 Single Crystal

A CuInSe 2 (CIS) bulk single crystal grown by the directional freezing method from the melt at 1250°C shows superior crystal quality, as evidenced by its (p-type) electrical properties. Photoluminescence at 1.5 K shows a strong and well resolved spectrum with fine structures never before observed fr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-03, Vol.37 (3A), p.L269
Main Authors: Chatraphorn, Somphong, Yoodee, Kajornyod, Songpongs, Pong, Chityuttakan, Chanwit, Sayavong, Khampheuy, Wongmanerod, Somrit, Holtz, Per Olof
Format: Article
Language:English
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Summary:A CuInSe 2 (CIS) bulk single crystal grown by the directional freezing method from the melt at 1250°C shows superior crystal quality, as evidenced by its (p-type) electrical properties. Photoluminescence at 1.5 K shows a strong and well resolved spectrum with fine structures never before observed from this compound. Free exciton emission exhibits a doublet structure which can either be described as a splitting due to the uniaxial crystal field or as a polariton. The energy gap of the CIS semiconductor as determined from the temperature dependence of the free exciton line is 1.058 eV. Two moderate free-to-bound transitions are assigned to V Cu and Cu In acceptors. A weak PL peak corresponding to a deep level is interpreted as arising from the Se i acceptor. Strong phonon replicas are also observed for the first time in a CIS bulk single crystal. The phonon wavelength of 218–237 cm -1 is in good agreement with the reported Raman result of 233 cm -1 for the LO phonon.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L269