Diffusion Barrier Characteristics of Hf(C,N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization

Diffusion barrier characteristics of Hf(C,N) thin films for Cu metallization was investigated. Hf(C,N) thin films were deposited on Si(100) substrates by pulsed D.C. plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using tetrakis diethyl amido hafnium (Hf[N(C 2 H 5 ) 2 ] 4 : TDEAHf...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-04, Vol.37 (4A), p.L406
Main Authors: Woo-Cheol Roh, Woo-Cheol Roh, Donggeun Jung, Donggeun Jung
Format: Article
Language:English
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Summary:Diffusion barrier characteristics of Hf(C,N) thin films for Cu metallization was investigated. Hf(C,N) thin films were deposited on Si(100) substrates by pulsed D.C. plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using tetrakis diethyl amido hafnium (Hf[N(C 2 H 5 ) 2 ] 4 : TDEAHf) and N 2 as precursors. X-ray diffraction analyses, sheet resistance measurements and Rutherford backscattering spectroscopy analyses revealed that Hf(C,N) films prevent diffusion of Cu fairly well up to 600°C. At 700°C, however, Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L406