Oxidation of GaAs Using Helicon-Wave Excited Nitrogen-Oxygen-Argon Plasma

GaAs (100) substrates were exposed to the helicon-wave excited N 2 –O 2 –Ar plasma without and with substrate heating at 200°C. The oxide dominantly composed of Ga 2 O 3 and As 2 O 3 , was grown on the GaAs substrate using this technique. The chemical composition of this oxide was highly uniform alo...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-04, Vol.37 (4B), p.L427
Main Authors: Satoshi Wada, Satoshi Wada, Fumio Kasahara, Fumio Kasahara, Akio Hara, Akio Hara, Hideaki Ikoma, Hideaki Ikoma
Format: Article
Language:English
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Summary:GaAs (100) substrates were exposed to the helicon-wave excited N 2 –O 2 –Ar plasma without and with substrate heating at 200°C. The oxide dominantly composed of Ga 2 O 3 and As 2 O 3 , was grown on the GaAs substrate using this technique. The chemical composition of this oxide was highly uniform along the thickness of the oxide film. Relatively good capacitance-voltage (C–V) characteristics were obtained. X-ray photoelectron spectroscopic data indicated that gallium nitride (GaN) bonds were formed at the oxide/GaAs interface only with both substrate heating and post-thermal annealing at 200°C for 30 min in a nitrogen ambient. The formation of the GaN/GaAs interface improved the C–V characteristics to some extent.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L427