Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide

Etch product chlorides from a gallium arsenide substrate subjected to a high density Cl 2 /Ar plasma etching process have been sampled in situ to determine regions of process space commensurate with ion-driven surface chemistry. Experimental results show three distinct surface chemistry regimes as t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-05, Vol.37 (5B), p.L577
Main Authors: Leonhardt, Darrin, Eddy, Charles R., Shamamian, Jr, Holm, Ronald T., Glembocki, Orest J., Thoms, Brian D., Katzer, Daniel S., Butler, James E.
Format: Article
Language:English
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Summary:Etch product chlorides from a gallium arsenide substrate subjected to a high density Cl 2 /Ar plasma etching process have been sampled in situ to determine regions of process space commensurate with ion-driven surface chemistry. Experimental results show three distinct surface chemistry regimes as the ion energy is increased: thermal chemistry for energies
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L577