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Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
In this paper, the n-channel Flash memory device degradation by utilizing the drain-avalanche hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The injected hole originated by the channel electron induced avalanche hot hole generation is believed to be responsible...
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| Published in: | Japanese Journal of Applied Physics 1998-07, Vol.37 (7A), p.L778 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c338t-4cb42c27e232e5d58829140d1a91943cdc01b43fb83bb86a13e92eea38e50d8f3 |
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| container_issue | 7A |
| container_start_page | L778 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Shen, Shih-Jye Yang, Evans Ching-Song Wong, Wei-Jer Wang, Yen-Sen Lin, Chrong-Jung Liang, Mong-Song Hsu, Charles Ching-Hsiang |
| description | In this paper, the n-channel Flash memory device degradation by utilizing the drain-avalanche
hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The
injected hole originated by the channel electron induced avalanche hot hole generation is believed to
be responsible for this degradation. This hole injection phenomena not only result in the interface
state generation but also lead to the hole trapping in the tunnel oxide. The increased interface
states degrade the conduction of the channel current severely, which leads to abnormal
write/erase (
W
/
E
) endurance characteristics. The trapped holes in the tunnel oxide increase the
tunneling probability and cause the gate disturbance issue. From the concerns of long term
reliability, the self-convergence operation by utilizing the DAHE mechanism is not a proper scheme
for reliable Flash memory products. |
| doi_str_mv | 10.1143/JJAP.37.L778 |
| format | article |
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hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The
injected hole originated by the channel electron induced avalanche hot hole generation is believed to
be responsible for this degradation. This hole injection phenomena not only result in the interface
state generation but also lead to the hole trapping in the tunnel oxide. The increased interface
states degrade the conduction of the channel current severely, which leads to abnormal
write/erase (
W
/
E
) endurance characteristics. The trapped holes in the tunnel oxide increase the
tunneling probability and cause the gate disturbance issue. From the concerns of long term
reliability, the self-convergence operation by utilizing the DAHE mechanism is not a proper scheme
for reliable Flash memory products.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.L778</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-07, Vol.37 (7A), p.L778</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c338t-4cb42c27e232e5d58829140d1a91943cdc01b43fb83bb86a13e92eea38e50d8f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Shen, Shih-Jye</creatorcontrib><creatorcontrib>Yang, Evans Ching-Song</creatorcontrib><creatorcontrib>Wong, Wei-Jer</creatorcontrib><creatorcontrib>Wang, Yen-Sen</creatorcontrib><creatorcontrib>Lin, Chrong-Jung</creatorcontrib><creatorcontrib>Liang, Mong-Song</creatorcontrib><creatorcontrib>Hsu, Charles Ching-Hsiang</creatorcontrib><title>Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme</title><title>Japanese Journal of Applied Physics</title><description>In this paper, the n-channel Flash memory device degradation by utilizing the drain-avalanche
hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The
injected hole originated by the channel electron induced avalanche hot hole generation is believed to
be responsible for this degradation. This hole injection phenomena not only result in the interface
state generation but also lead to the hole trapping in the tunnel oxide. The increased interface
states degrade the conduction of the channel current severely, which leads to abnormal
write/erase (
W
/
E
) endurance characteristics. The trapped holes in the tunnel oxide increase the
tunneling probability and cause the gate disturbance issue. From the concerns of long term
reliability, the self-convergence operation by utilizing the DAHE mechanism is not a proper scheme
for reliable Flash memory products.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYRoMoOKd3_oBcKpia5E3X9LLswzoqE-auS5q-7Sr9GEkZ7N-7Ma8enotzLg4hz4IHQih4X6-T7wCiIIsifUMmAlTEFJ-Ft2TCuRRMxVLekwfvf893FioxIfUCa2dKMzZDT4eKrlrj9_QLu8Gd6M43fU0XzjQ9S46mNb3dI02HkS5btKM7Iy-LJF2-0i22FZsP_RFdjb1Fujmgu0q3Z6bDR3JXmdbj0_9OyW61_JmnLNt8fM6TjFkAPTJlCyWtjFCCxLAMtZaxULwUJhaxAltaLgoFVaGhKPTMCMBYIhrQGPJSVzAlb1evdYP3Dqv84JrOuFMueH6JlF8i5RDll0jwB5V9WeE</recordid><startdate>19980701</startdate><enddate>19980701</enddate><creator>Shen, Shih-Jye</creator><creator>Yang, Evans Ching-Song</creator><creator>Wong, Wei-Jer</creator><creator>Wang, Yen-Sen</creator><creator>Lin, Chrong-Jung</creator><creator>Liang, Mong-Song</creator><creator>Hsu, Charles Ching-Hsiang</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980701</creationdate><title>Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme</title><author>Shen, Shih-Jye ; Yang, Evans Ching-Song ; Wong, Wei-Jer ; Wang, Yen-Sen ; Lin, Chrong-Jung ; Liang, Mong-Song ; Hsu, Charles Ching-Hsiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-4cb42c27e232e5d58829140d1a91943cdc01b43fb83bb86a13e92eea38e50d8f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shen, Shih-Jye</creatorcontrib><creatorcontrib>Yang, Evans Ching-Song</creatorcontrib><creatorcontrib>Wong, Wei-Jer</creatorcontrib><creatorcontrib>Wang, Yen-Sen</creatorcontrib><creatorcontrib>Lin, Chrong-Jung</creatorcontrib><creatorcontrib>Liang, Mong-Song</creatorcontrib><creatorcontrib>Hsu, Charles Ching-Hsiang</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shen, Shih-Jye</au><au>Yang, Evans Ching-Song</au><au>Wong, Wei-Jer</au><au>Wang, Yen-Sen</au><au>Lin, Chrong-Jung</au><au>Liang, Mong-Song</au><au>Hsu, Charles Ching-Hsiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-07-01</date><risdate>1998</risdate><volume>37</volume><issue>7A</issue><spage>L778</spage><pages>L778-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>In this paper, the n-channel Flash memory device degradation by utilizing the drain-avalanche
hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The
injected hole originated by the channel electron induced avalanche hot hole generation is believed to
be responsible for this degradation. This hole injection phenomena not only result in the interface
state generation but also lead to the hole trapping in the tunnel oxide. The increased interface
states degrade the conduction of the channel current severely, which leads to abnormal
write/erase (
W
/
E
) endurance characteristics. The trapped holes in the tunnel oxide increase the
tunneling probability and cause the gate disturbance issue. From the concerns of long term
reliability, the self-convergence operation by utilizing the DAHE mechanism is not a proper scheme
for reliable Flash memory products.</abstract><doi>10.1143/JJAP.37.L778</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998-07, Vol.37 (7A), p.L778 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_37_L778 |
| source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List); Institute of Physics (IOP) Electronic Journals |
| title | Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme |
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