A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist

To realize a fine periodical pattern by electron beam lithography, a stady for using calixarene as a resist was carried out. A 25-nm-pitch resist pattern was fabricated and transferred to a thin InP layer by two-step wet chemical etching. Precise slight O 2 ashing, to eliminate residual matter was e...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-07, Vol.37 (7A), p.L827
Main Authors: Atsushi Kokubo, Atsushi Kokubo, Tetsuya Hattori, Tetsuya Hattori, Hiroo Hongo, Hiroo Hongo, Michihiko Suhara, Michihiko Suhara, Yasuyuki Miyamoto, Yasuyuki Miyamoto, Kazuhito Furuya, Kazuhito Furuya
Format: Article
Language:English
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Summary:To realize a fine periodical pattern by electron beam lithography, a stady for using calixarene as a resist was carried out. A 25-nm-pitch resist pattern was fabricated and transferred to a thin InP layer by two-step wet chemical etching. Precise slight O 2 ashing, to eliminate residual matter was essential to transfer the pattern by wet etching. The controllability of the width was improved when using calixarene, when the period was 40 nm. Furthermore, a 25-nm-pitch InP pattern was buried in a GaInAs structure by organometallic vapor phase epitaxy. This technology could be applied to realize electron wave devices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L827