Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy

TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-ene...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-02, Vol.38 (2S), p.1026
Main Authors: Takenaka, Keiichi, Asahi, Hajime, Koh, Hideki, Asami, Kumiko, Gonda, Shun-ichi, Oe, Kunishige
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show (2×2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.1026