A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant

A fluorinated organic-silica film was prepared by quasi hydrogen-free chemical-vapor deposition. The content of methyl groups and fluorine atoms incorporated in the film were as much as 43% and 9% of that of Si. The film had good insulating characteristics with the dielectric constant, k , of as low...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-04, Vol.38 (4S), p.2368
Main Authors: Yasutaka Uchida, Yasutaka Uchida, Kohshi Taguchi, Kohshi Taguchi, Satoshi Sugahara, Satoshi Sugahara, Masakiyo Matsumura, Masakiyo Matsumura
Format: Article
Language:English
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Summary:A fluorinated organic-silica film was prepared by quasi hydrogen-free chemical-vapor deposition. The content of methyl groups and fluorine atoms incorporated in the film were as much as 43% and 9% of that of Si. The film had good insulating characteristics with the dielectric constant, k , of as low as 2.5 even under as-prepared conditions. They were improved by vacuum annealing; k was 2.1 and the low-field resistivity was 10 16 Ωcm after annealing at 500°C. It was confirmed that the film prepared at 200°C was stable for more than 20 days in the air.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.2368