Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots

We report the quantum dot infrared photodetector using the modulation doped InAs self-assembled quantum dots. By modulation doping, it is possible to remove the effect of the dopants on the energy level in InAs dots and to attribute clearly the infrared photocurrent to the carrier excitation in InAs...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-04, Vol.38 (4S), p.2559
Main Authors: Horiguchi, Naoto, Futatsugi, Toshiro, Nakata, Yoshiaki, Yokoyama, Naoki, Mankad, Tanaya, Petroff, Pierre M.
Format: Article
Language:English
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Summary:We report the quantum dot infrared photodetector using the modulation doped InAs self-assembled quantum dots. By modulation doping, it is possible to remove the effect of the dopants on the energy level in InAs dots and to attribute clearly the infrared photocurrent to the carrier excitation in InAs dots. The infrared photocurrent in the detector was clearly observed up to 30 K. The peak energy and the polarization dependence of the infrared photocurrent are comparable to the infrared electron excitation from the ground state in InAs dots to the conduction band edge of GaAs barriers.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.2559