Annealing Effect of ZnSe:N/ZnSe Grown by Metalorganic Chemical Vapor Deposition

High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficien...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-05, Vol.38 (5R), p.2725
Main Authors: Miki, Takeshi, Wang, Jifeng, Omino, Akira, Isshiki, Minoru
Format: Article
Language:English
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Summary:High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficiency of nitrogen in ZnSe epitaxial layers, ZnSe:N/ZnSe was annealed in melted zinc using the rapid thermal annealing technique. The dependence of net acceptor concentration on annealing duration, VI/II flux ratio, and ammonia flux was examined. The highest net acceptor concentration value calculated from capacitance–voltage ( C – V ) measurements reached 2×10 17 cm -3 . This is the highest value obtained so far for ZnSe homosystem epitaxial layers grown by the MOCVD method.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.2725