Approach to Next-Generation Optical Lithography

We discuss the possibility of using optical lithography when the design size is below 130 nm. Our optical simulations at the laser wavelengths of KrF (248 nm), ArF (193 nm), F 2 (157 nm), Kr 2 (146 nm), ArKr (134 nm), Ar 2 (121 nm), and the extreme ultraviolet (EUV) (13 nm) indicate that the ArF exc...

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Published in:Japanese Journal of Applied Physics 1999-05, Vol.38 (5R), p.3001
Main Authors: Keisuke Nakazawa, Keisuke Nakazawa, Toshio Onodera, Toshio Onodera, Masaru Sasago, Masaru Sasago
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container_issue 5R
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description We discuss the possibility of using optical lithography when the design size is below 130 nm. Our optical simulations at the laser wavelengths of KrF (248 nm), ArF (193 nm), F 2 (157 nm), Kr 2 (146 nm), ArKr (134 nm), Ar 2 (121 nm), and the extreme ultraviolet (EUV) (13 nm) indicate that the ArF excimer laser can be used up to the 100 nm generation and that the lithographic tool most suitable for the 70 nm generation is an ArKr laser system with a numerical aperture larger than 0.65. They also indicate that EUV sources will be needed for the 50 nm generation and that high-contrast resists will be needed for the 70 nm generation and beyond.
doi_str_mv 10.1143/JJAP.38.3001
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title Approach to Next-Generation Optical Lithography
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