Thermoelectric Properties of and Dopant Distribution in SiC Thin Films

We fabricated thin films of p-type SiC by the evaporation technique with metal dopants such as silver, nickel and copper, which acted as acceptors. The thermoelectric properties of SiC thin films were measured. These p-type dopants could reduce the resistance of SiC films and improve their performan...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-08, Vol.38 (8R), p.4852
Main Author: andToru Miyakawa, Toshio Kawahara
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We fabricated thin films of p-type SiC by the evaporation technique with metal dopants such as silver, nickel and copper, which acted as acceptors. The thermoelectric properties of SiC thin films were measured. These p-type dopants could reduce the resistance of SiC films and improve their performance as thermoelectric materials. For samples doped with 5 wt% Ag, the resistivity is very low compared with those of other samples. The thermoelectric power of the Ag-doped sample shows a temperature dependence in contrast to those of other samples.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.4852