Evaluation of n + a-Si Contact with Indium Tin Oxide by X-Ray Photoelectron Spectroscopy Valence Band Measurement

We investigated the cause of the high resistance in a contact structure of phosphorus-doped amorphous silicon (n + a-Si) with indium tin oxide (ITO) for thin-film transistor liquid crystal displays (TFT-LCDs). X-ray photoelectron spectroscopy (XPS) valence band analysis for this interface was newly...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-09, Vol.38 (9R), p.5232
Main Authors: Yabuhara, Hidehiko, Kataoka, Yoshinori
Format: Article
Language:English
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Summary:We investigated the cause of the high resistance in a contact structure of phosphorus-doped amorphous silicon (n + a-Si) with indium tin oxide (ITO) for thin-film transistor liquid crystal displays (TFT-LCDs). X-ray photoelectron spectroscopy (XPS) valence band analysis for this interface was newly developed. TFT-LCD fabrication processes could be simplified by using ITO in pixels as the drain contact electrode. One problem of this drain structure was the increase in electrical resistance associated with annealing. XPS valence band measurements of the n + a-Si/ITO structure revealed that the upper edge of the Si valence band shifted to a lower binding energy after annealing at 250°C. These results suggest that the increase in electrical resistance was mainly caused by the increase in contact resistance. The above-mentioned result was also confirmed by secondary ion mass spectrometry (SIMS) analysis and resistance measurements.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.5232