Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication

• Published in: Japanese Journal of Applied Physics 1999-10, Vol.38 (10R), p.6161
• Main Authors: Sachiko Kobayashi, Sachiko Kobayashi, Taiga Uno, Taiga Uno, Kazuko Yamamoto, Kazuko Yamamoto, Satoshi Tanaka, Satoshi Tanaka, Toshiya Kotani, Toshiya Kotani, Soichi Inoue, Soichi Inoue, Hitoshi Higurashi, Hitoshi Higurashi, Susumu Watanabe, Susumu Watanabe, Mitsuhiro Yano, Mitsuhiro Yano, Shinichiro Ohki, Shinichiro Ohki, Kiyoshi Tsunakawa, Kiyoshi Tsunakawa
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.38.6161

In this paper, we demonstrate the feasibility of a refined one-dimensional (1D) optical proximity correction (OPC) method incorporated into a hierarchical mask data processing system. The correction accuracy was examined using experimental and lithography simulation by application to test patterns of a 1 Gbit dynamic random access memory (DRAM) metal layer. In the case of the 0.16 µm rule, the standard deviation of the refined 1D OPC was reduced to 9 nm, which is 70% of the standard deviation of 13 nm of the conventional 1D OPC method. The proposed OPC system, using an engineering workstation, succeeded in correcting the metal layer in a miniature model of a 1 Gbit DRAM within 2-4 days. Well-designed hierarchical management in the mask data processing system suppressed mask data volume expansion to within 4% compared to the data volume without OPC. These results suggest that the refined 1D OPC method is useful for the correction of 1 Gbit and future DRAM devices.