Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

Characterisation of bonded high-resistivity silicon wafers by the microwave photoconductance decay (µPCD) technique has been performed. Bonding is shown to drastically alter the bulk recombination activity of the wafers. The technique allows to separate between bulk and interface recombination and a...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-11, Vol.38 (11R), p.6181
Main Authors: Sarrabayrouse, Gérard, Lecerf, Pascal, Bielle-Daspet, Danielle
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Characterisation of bonded high-resistivity silicon wafers by the microwave photoconductance decay (µPCD) technique has been performed. Bonding is shown to drastically alter the bulk recombination activity of the wafers. The technique allows to separate between bulk and interface recombination and appears as a powerful tool to evaluate the quality of the bonded interface.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.6181