Application of Zirconium Silicon Oxide Films to an Attenuated Phase-Shifting Mask in ArF Lithography

We have investigated the durability under ArF excimer laser light of bi-layer zirconium silicon oxide (ZrSi x O y ) films used as the shifter of an attenuated phase-shifting mask (Att-PSM). We have achieved excellent stability by using the structure of the transparent film (TF) on the absorptive fil...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7004
Main Authors: Matsuo, Takahiro, Onodera, Toshio, Nakazawa, Keisuke, Ogawa, Tohru, Morimoto, Hiroaki, Haraguchi, Takashi, Fukuhara, Nobuhiko, Matsuo, Tadashi, Otaki, Masao, Takeuchi, Susumu
Format: Article
Language:English
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Summary:We have investigated the durability under ArF excimer laser light of bi-layer zirconium silicon oxide (ZrSi x O y ) films used as the shifter of an attenuated phase-shifting mask (Att-PSM). We have achieved excellent stability by using the structure of the transparent film (TF) on the absorptive film (AF) rather than the structure of AF on TF. We can estimate a sufficient lifetime of more than three years in mass production for TF/AF/quartz structure. By XPS analysis, it has been clarified that the surface of TF is stable to ArF irradiation and the surface of AF is easily oxidized by the irradiation. TF/AF/quartz is the optimum structure for the prevention of surface oxidation. 0.13 µm line patterns have been achieved with a sufficient process margin by using optimized bi-layer ZrSi x O y films as an Att-PSM and off-axis illumination in ArF lithography.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.7004