Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region

In this article, we evaluate the lithographic performance of a newly developed three-component chemically amplified negative resist in the sub-100-nm region which utilizes polyhydroxystyrene partially protected by t -Boc groups as a base polymer; alicyclic-bromides with a ketonic group as a highly e...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7090
Main Authors: Deguchi, Kimiyoshi, Nakamura, Jiro, Kawai, Yoshio, Ohno, Terukazu, Fukuda, Makoto, Oda, Masatoshi, Kochiya, Hiroyuki, Ushiyama, Yukihiko, Hamada, Hiroshi, Shimizu, Takashi
Format: Article
Language:English
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Summary:In this article, we evaluate the lithographic performance of a newly developed three-component chemically amplified negative resist in the sub-100-nm region which utilizes polyhydroxystyrene partially protected by t -Boc groups as a base polymer; alicyclic-bromides with a ketonic group as a highly efficient acid generator; hexamethoxymethylmelamine as a cross-linker; and basic added compounds. The resist will extend the feasibility of synchrotron radiation lithography for LSI fabrication down to the 70 nm line and space patterns with an acceptable sensitivity, a large exposure latitude, and good performance in LSI processes.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.7090