Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region

In this article, we evaluate the lithographic performance of a newly developed three-component chemically amplified negative resist in the sub-100-nm region which utilizes polyhydroxystyrene partially protected by t -Boc groups as a base polymer; alicyclic-bromides with a ketonic group as a highly e...

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Published in:Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7090
Main Authors: Deguchi, Kimiyoshi, Nakamura, Jiro, Kawai, Yoshio, Ohno, Terukazu, Fukuda, Makoto, Oda, Masatoshi, Kochiya, Hiroyuki, Ushiyama, Yukihiko, Hamada, Hiroshi, Shimizu, Takashi
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cited_by cdi_FETCH-LOGICAL-c381t-bd27501616915889f970c845764e3c15f72dac864329cb411be504fb9b505d433
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container_issue 12S
container_start_page 7090
container_title Japanese Journal of Applied Physics
container_volume 38
creator Deguchi, Kimiyoshi
Nakamura, Jiro
Kawai, Yoshio
Ohno, Terukazu
Fukuda, Makoto
Oda, Masatoshi
Kochiya, Hiroyuki
Ushiyama, Yukihiko
Hamada, Hiroshi
Shimizu, Takashi
description In this article, we evaluate the lithographic performance of a newly developed three-component chemically amplified negative resist in the sub-100-nm region which utilizes polyhydroxystyrene partially protected by t -Boc groups as a base polymer; alicyclic-bromides with a ketonic group as a highly efficient acid generator; hexamethoxymethylmelamine as a cross-linker; and basic added compounds. The resist will extend the feasibility of synchrotron radiation lithography for LSI fabrication down to the 70 nm line and space patterns with an acceptable sensitivity, a large exposure latitude, and good performance in LSI processes.
doi_str_mv 10.1143/JJAP.38.7090
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title Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
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