Electron Affinity and Effect of Annealing on Heavily Boron-Doped Diamond Films

A series of heavily boron-doped polycrystalline diamond films was studied. It was found that the electron affinity of the diamond surfaces increased with increasing doping concentration and the Fermi level was pinned at ∼0.35 eV above the valence band maximum (VBM). After annealing at ∼500°C, the el...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-02, Vol.38 (2R), p.791
Main Authors: Wong, Ka Wai, Lee, Shuit Tong, Lin, Zhangda, Lam, Yat Wah, Kwok, Raymund Wai Man
Format: Article
Language:English
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Summary:A series of heavily boron-doped polycrystalline diamond films was studied. It was found that the electron affinity of the diamond surfaces increased with increasing doping concentration and the Fermi level was pinned at ∼0.35 eV above the valence band maximum (VBM). After annealing at ∼500°C, the electron affinity of all samples decreased and the Fermi level increased to  0.87 eV. These changes were concurrent with a decrease in the concentration of both boron and oxygen, and an increase in that of B x O y relative to elemental boron on the diamond surfaces. A model was proposed to explain the dependence of electron affinity on boron concentration, and to explain other changes observed upon annealing.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.791