Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

The effects of the tungsten polycide technologies and rapid thermal annealing (RTA) on thin polyoxide electrical characteristics have been investigated. It is found that a thin polyoxide with dichlorosilane (DCS)-based chemical vapor deposition (CVD) WSi X exhibits both good J-E characteristics and...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-10, Vol.38 (10A), p.L1091
Main Authors: Huang, Kuo-Ching, Fang, Yean-Kuen, Yaung, Dun-Nian, Hsieh, Jang-Cheng, Liang, Mong-Song
Format: Article
Language:English
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Summary:The effects of the tungsten polycide technologies and rapid thermal annealing (RTA) on thin polyoxide electrical characteristics have been investigated. It is found that a thin polyoxide with dichlorosilane (DCS)-based chemical vapor deposition (CVD) WSi X exhibits both good J-E characteristics and reliability. This is due to moderated fluorine incorporation, which improves poly-Si/SiO 2 interfaces region but not degrades the bulk polyoxide. Moreover, the post-polyoxidation RTA is also found to improve the polyoxide quality. According to the results, the DCS-based CVD WSi X with post-polyoxidation RTA is a good candidate for polycide gate technique in high-density nonvolatile memories.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L1091