An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides

We have fabricated and investigated the fundamental electron transport properties of a two-terminal tunnel diode, which consisted of a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometer-scale oxides locally generated by using an atomi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-02, Vol.38 (2B), p.L160
Main Authors: Okada, Yoshitaka, Iuchi, Yoshimasa, Kawabe, Mitsuo, Harris, James S., Jr, Jr
Format: Article
Language:English
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Summary:We have fabricated and investigated the fundamental electron transport properties of a two-terminal tunnel diode, which consisted of a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometer-scale oxides locally generated by using an atomic force microscope (AFM). The AFM-generated oxides were adopted successfully as integral tunnel barriers for electron transport, and single electron transport and Coulomb blockade regimes were observed in a quantum dot tunnel diode structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L160