Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth

The optical and electrical properties of GaN films grown by using In-doping method during growth have been investigated. The GaN films were grown on α-Al 2 O 3 (0001) substrates by gas-source molecular beam epitaxy. X-ray diffraction measurements illustrate that the quality of GaN films were improve...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999, Vol.38 (4B), p.L411
Main Authors: Shen, Xu-Qiang, Ramvall, Peter, Riblet, Philippe, Aoyagi, Yoshinobu
Format: Article
Language:English
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Summary:The optical and electrical properties of GaN films grown by using In-doping method during growth have been investigated. The GaN films were grown on α-Al 2 O 3 (0001) substrates by gas-source molecular beam epitaxy. X-ray diffraction measurements illustrate that the quality of GaN films were improved by In-doping. Photoluminescence measurements at 10 K show that the band-edge related emission of GaN was enhanced by more than one order of magnitude by this In-doping method, while the luminescence originating from D-A pair recombination and structural defects, or possibly oxygen, was reduced. Furthermore, Hall effect measurements at room temperature (300 K) gave a higher Hall mobility of In-doped samples than non-doped one. The technique of In-doping during GaN growth looks promising for improving the optical and electrical properties of optic and electronic devices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L411