Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application

In this paper, we report on the issues and optimization guidelines for nitrided oxide (NO) gates for logic and dynamic random access memory (DRAM) devices. We intensively studied the dependence of device characteristics on the nitrogen concentration in NO gates. In the case of logic devices, degrada...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-04, Vol.39 (4S), p.2203
Main Authors: Jung, Jong-Wan, Park, Sung-Kye, Yoon, Gyu-Han, Kang, Dae-Kwan, Lee, Youngjong
Format: Article
Language:English
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Summary:In this paper, we report on the issues and optimization guidelines for nitrided oxide (NO) gates for logic and dynamic random access memory (DRAM) devices. We intensively studied the dependence of device characteristics on the nitrogen concentration in NO gates. In the case of logic devices, degradation of short channel characteristics in n-channel metal oxide semiconductor field effect transistors (NMOSFETs) and degradation of drive current in p-channel MOSFETs (PMOSFETs) limits the maximum nitrogen concentration. In DRAMs, an additional V T dose to compensate for the decrease of V T in NO gates causes a degradation in the refresh time performance due to the increase of the electric field in the space-charge region. This reveals that, for NO-gate DRAM, the nitrogen concentration should be minimized to prevent the degradation of refresh characteristics.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.2203