Growth Sector Dependence of Low Frequency Raman Peaks Observed in Boron-Doped Homoepitaxial Diamond Particles

The Raman spectra of boron doped homoepitaxial diamond particles are investigated. The low frequency parts of the Raman scattering spectra of (100) and (111) growth sectors are very different in peak numbers and in peak positions. (100) facet has three broad bands centered at 580, 920 and 1020 cm -1...

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Published in:Japanese Journal of Applied Physics 2000-05, Vol.39 (5R), p.2795
Main Authors: Wang, Yuguang, Li, Hongdong, Lin, Zhangda, Feng, Kean
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Language:English
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description The Raman spectra of boron doped homoepitaxial diamond particles are investigated. The low frequency parts of the Raman scattering spectra of (100) and (111) growth sectors are very different in peak numbers and in peak positions. (100) facet has three broad bands centered at 580, 920 and 1020 cm -1 , (111) facet has only two centered at 500 and 1180 cm -1 . These low frequency peaks originate from Raman scattering by phonons far from the center of the Brillouin zone. Electronic Raman scattering may also contribute to part of the Raman spectra.
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title Growth Sector Dependence of Low Frequency Raman Peaks Observed in Boron-Doped Homoepitaxial Diamond Particles
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