Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conve...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-02, Vol.39 (2R), p.368
Main Authors: Ono, Naoki, Kitamura, Kounosuke, Nakajima, Ken, Shimanuki, Yasushi
Format: Article
Language:English
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Summary:Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10 18 atoms/cm 3 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.368