Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conve...

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Published in:Japanese Journal of Applied Physics 2000-02, Vol.39 (2R), p.368
Main Authors: Ono, Naoki, Kitamura, Kounosuke, Nakajima, Ken, Shimanuki, Yasushi
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Language:English
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cited_by cdi_FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3
cites cdi_FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3
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creator Ono, Naoki
Kitamura, Kounosuke
Nakajima, Ken
Shimanuki, Yasushi
description Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10 18 atoms/cm 3 .
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_39_368</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_39_368</sourcerecordid><originalsourceid>FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3</originalsourceid><addsrcrecordid>eNotkM1KAzEUhYMoWKsrXyA7FzJ1Msn8ZFlHa1taFGwFV0MmudOOTJOSZMC-ik9rBt3cw7k_34WD0C2JJ4Qw-rBcTt8mlE9oVpyhEaEsj1icpedoFMcJiRhPkkt05dxXsFnKyAj9rEG43sIBtMemwZ-m17s7h9dG9V3vhtZ727XS6KB61wEu7cl50WHh8bzd7fEGDkewwgcIFlrhhXf4CY6gFWh5wuHw0dhQS6NleBI22-C2LtCw3wOedfDd2wD8aOv_4Rr83qhrdNGIzsHNv47Rdva8KefR6vVlUU5XkaQ595FiNfBUcsWEbIjMJMtYrvKUJzWLGzVYWau8BgZpU-SxKAgVWcqlLCRJpKBjdP_HldY4Z6GpjrY9CHuqSFwNsVZDrBXlVYiV_gL9CW5w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Ono, Naoki ; Kitamura, Kounosuke ; Nakajima, Ken ; Shimanuki, Yasushi</creator><creatorcontrib>Ono, Naoki ; Kitamura, Kounosuke ; Nakajima, Ken ; Shimanuki, Yasushi</creatorcontrib><description>Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10 18 atoms/cm 3 .</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.39.368</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2000-02, Vol.39 (2R), p.368</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3</citedby><cites>FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ono, Naoki</creatorcontrib><creatorcontrib>Kitamura, Kounosuke</creatorcontrib><creatorcontrib>Nakajima, Ken</creatorcontrib><creatorcontrib>Shimanuki, Yasushi</creatorcontrib><title>Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method</title><title>Japanese Journal of Applied Physics</title><description>Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10 18 atoms/cm 3 .</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEUhYMoWKsrXyA7FzJ1Msn8ZFlHa1taFGwFV0MmudOOTJOSZMC-ik9rBt3cw7k_34WD0C2JJ4Qw-rBcTt8mlE9oVpyhEaEsj1icpedoFMcJiRhPkkt05dxXsFnKyAj9rEG43sIBtMemwZ-m17s7h9dG9V3vhtZ727XS6KB61wEu7cl50WHh8bzd7fEGDkewwgcIFlrhhXf4CY6gFWh5wuHw0dhQS6NleBI22-C2LtCw3wOedfDd2wD8aOv_4Rr83qhrdNGIzsHNv47Rdva8KefR6vVlUU5XkaQ595FiNfBUcsWEbIjMJMtYrvKUJzWLGzVYWau8BgZpU-SxKAgVWcqlLCRJpKBjdP_HldY4Z6GpjrY9CHuqSFwNsVZDrBXlVYiV_gL9CW5w</recordid><startdate>20000201</startdate><enddate>20000201</enddate><creator>Ono, Naoki</creator><creator>Kitamura, Kounosuke</creator><creator>Nakajima, Ken</creator><creator>Shimanuki, Yasushi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000201</creationdate><title>Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method</title><author>Ono, Naoki ; Kitamura, Kounosuke ; Nakajima, Ken ; Shimanuki, Yasushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ono, Naoki</creatorcontrib><creatorcontrib>Kitamura, Kounosuke</creatorcontrib><creatorcontrib>Nakajima, Ken</creatorcontrib><creatorcontrib>Shimanuki, Yasushi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ono, Naoki</au><au>Kitamura, Kounosuke</au><au>Nakajima, Ken</au><au>Shimanuki, Yasushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2000-02-01</date><risdate>2000</risdate><volume>39</volume><issue>2R</issue><spage>368</spage><pages>368-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10 18 atoms/cm 3 .</abstract><doi>10.1143/JJAP.39.368</doi></addata></record>
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title Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T11%3A22%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurement%20of%20Young's%20Modulus%20of%20Silicon%20Single%20Crystal%20at%20High%20Temperature%20and%20Its%20Dependency%20on%20Boron%20Concentration%20Using%20the%20Flexural%20Vibration%20Method&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ono,%20Naoki&rft.date=2000-02-01&rft.volume=39&rft.issue=2R&rft.spage=368&rft.pages=368-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.39.368&rft_dat=%3Ccrossref%3E10_1143_JJAP_39_368%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c379t-d4be95c9d4acf1c6c4647d7592b40fdc464cbd7be4e5f870a813a659cc8c12ca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true