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Chopping Frequency Variation of Photoacoustic Amplitude from Porous Silicon
We investigated the possibility of applying photoacoustic (PA) spectroscopy to the study of luminescent porous silicon. Since porous silicon is usually formed on a silicon substrate, PA spectroscopy is useful for obtaining the absorption coefficient of porous silicon without removing the substrate....
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Published in: | Japanese Journal of Applied Physics 2000, Vol.39 (2R), p.448 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We investigated the possibility of applying photoacoustic (PA) spectroscopy to
the study of luminescent porous silicon. Since porous silicon is usually formed on a
silicon substrate, PA spectroscopy is useful for obtaining the absorption coefficient of
porous silicon without removing the substrate. In this article, we investigated the
chopping frequency dependence of the PA signal from porous silicon and showed that
the chopping frequency is critical for the exclusion of the PA signal from silicon
substrate. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.448 |