Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition

The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was investigated. The samples annealed in N 2 /O 2 (1%) ambient exhibited the best electrical properties with respect to hole concentration. SIMS data suggest...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000, Vol.39 (8R), p.4749
Main Authors: Chung, Sung Hoon, Lachab, Mohamed, Wang, Tao, Lacroix, Yves, Basak, Durga, Fareed, Qhalid, Kawakami, Yoshihisa, Nishino, Katsushi, Sakai, Shiro
Format: Article
Language:English
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Summary:The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was investigated. The samples annealed in N 2 /O 2 (1%) ambient exhibited the best electrical properties with respect to hole concentration. SIMS data suggested that oxygen reacted with hydrogen present in the Mg-doped GaN samples during the thermal annealing process, thereby enhancing the activation of Mg acceptors.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.4749