Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal

The effects of post-etching treatments on Si selective epitaxial growth (SEG) have been studied. In the case of O 2 downflow treatment, SEG Si had dislocations and a rough surface. It was found that this abnormal growth was caused by SiO 2 formed by the post-etching treatment which could not be remo...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-08, Vol.39 (8R), p.4952
Main Authors: Hayashi, Hisataka, Ohuchi, Kazuya, Miyano, Kiyotaka, Hokazono, Akira, Mizushima, Ichiro, Ohiwa, Tokuhisa
Format: Article
Language:English
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Summary:The effects of post-etching treatments on Si selective epitaxial growth (SEG) have been studied. In the case of O 2 downflow treatment, SEG Si had dislocations and a rough surface. It was found that this abnormal growth was caused by SiO 2 formed by the post-etching treatment which could not be removed by diluted hydrogen fluoride (DHF) treatment prior to the SEG process. This SiO 2 was not removed due to the existence of carbon at the Si/SiO 2 interface which had been implanted by reactive ion etching (RIE). In the case of O 2 plasma treatment, there was no carbon at the Si/SiO 2 interface, SiO 2 was completely removed by DHF, and SEG Si was grown successfully. In conclusion, a new, low-temperature Si surface removal method with precise etching depth control using O 2 plasma treatment followed by DHF treatment is demonstrated to be an effective pretreatment for Si SEG.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.4952