A Deposition Mechanism of SiO 2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water

The deposition characteristic of SiO 2 chemical vapor deposition (CVD) using tetra-isocyanate silane can be explained by the adsorption of source gases on the substrate surface. The deposition reaction occurs in the adsorbed layer. The deposition rate of the CVD was calculated under the assumption t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-09, Vol.39 (9R), p.5164
Main Authors: Akira Fujimoto, Akira Fujimoto, Osamu Sugiura, Osamu Sugiura
Format: Article
Language:English
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Summary:The deposition characteristic of SiO 2 chemical vapor deposition (CVD) using tetra-isocyanate silane can be explained by the adsorption of source gases on the substrate surface. The deposition reaction occurs in the adsorbed layer. The deposition rate of the CVD was calculated under the assumption that source gases follow the BET isotherm theory independently. The dependence of deposition rate on temperature was well consistent with the experimental data by using a reaction constant V SiO 2 =1000 nm/min.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.5164