Preparation and Properties of Bi 2 SiO 5 /Si Structures

• Published in: Japanese Journal of Applied Physics 2000-09, Vol.39 (9S), p.5512
• Main Authors: Masaki Yamaguchi, Masaki Yamaguchi, Kouji Hiraki, Kouji Hiraki, Takao Nagatomo, Takao Nagatomo, Yoichiro Masuda, Yoichiro Masuda
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.39.5512

Bismuth silicate (Bi 2 SiO 5 ) films, expected as the intermediate buffer layer between the bismuth layer-structured ferroelectrics (BLSF) and silicon substrate, were prepared on (100)-oriented silicon wafers by rf magnetron sputtering. The c -axis-oriented Bi 2 SiO 5 films with smooth surface morphology were obtained at the substrate temperature of 400°C. The leakage current density is on the order of 10 -10 A·cm -2 , under the applied electric field of less than 350 kV·cm -1 . From capacitance–voltage characteristics measurement results, it is worth noting that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6 ×10 12 cm -2 ·eV -1 . The numerical evaluation results indicate that the metal-ferroelectric-insulator-semiconductor (MFIS) capacitor can be reversed at a low applied voltage. This suggests that Bi 4 Ti 3 O 12 /Bi 2 SiO 5 /Si structures are suitable for application for ferroelectric memory devices.