Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1× X-Ray Masks

This paper discusses the delineation characteristics of a state-of-the-art variable-shaped electron-beam (e-beam) mask writer called the EB-X3, which was developed both to write 100-nm-node patterns on X-ray membrane masks and also to study the feasibility of the mask technology. For a 1-Gb dynamic...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000, Vol.39 (12S), p.6902
Main Authors: Shinji Tsuboi, Shinji Tsuboi, Hiroshi Watanabe, Hiroshi Watanabe, Mizunori Ezaki, Mizunori Ezaki, Hajime Aoyama, Hajime Aoyama, Yukiko Kikuchi, Yukiko Kikuchi, Yoshinori Nakayama, Yoshinori Nakayama, Shigehisa Ohki, Shigehisa Ohki, Toshifumi Watanabe, Toshifumi Watanabe, Tetsuo Morosawa, Tetsuo Morosawa, Kenichi Saito, Kenichi Saito, Masatoshi Oda, Masatoshi Oda, Tadahito Matsuda, Tadahito Matsuda
Format: Article
Language:English
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Summary:This paper discusses the delineation characteristics of a state-of-the-art variable-shaped electron-beam (e-beam) mask writer called the EB-X3, which was developed both to write 100-nm-node patterns on X-ray membrane masks and also to study the feasibility of the mask technology. For a 1-Gb dynamic random access memory (DRAM) pattern (22 mm×22 mm chip), the best image placement (IP) accuracy obtained so far is 3σ( X , Y ) = (5.6 nm, 8.4 nm) and maximum Δ( X , Y ) = (4.2 nm, 7.3 nm). IP values less than 15 nm are reproducible. Precise temperature control and a three-point support pallet (4-inch membrane warpage:
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.6902