Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere

Thermally stimulated current (TSC) measurements of unintentionally doped n-type GaN epilayers grown on sapphire substrates in a nitrogen rich atmosphere using plasma-assisted molecular beam epitaxy were carried out to investigate the physical properties of trap levels in GaN films. The TSC spectra s...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-11, Vol.39 (11A), p.L1084
Main Authors: Jung, Woon Hyung, Kang, Tae Won, Kim, Tae Whan, Chung, Kwan Soo
Format: Article
Language:English
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Summary:Thermally stimulated current (TSC) measurements of unintentionally doped n-type GaN epilayers grown on sapphire substrates in a nitrogen rich atmosphere using plasma-assisted molecular beam epitaxy were carried out to investigate the physical properties of trap levels in GaN films. The TSC spectra showed one dominant trap level at 150 K, and the activation energy, the capture cross section, and the emission frequency of the trap level were 0.265 eV, 2.58×10 -21 cm 2 , and 3.17×10 5 s -1 , respectively. These results can help clarify the potential applications of GaN epilayers in optoelectronic devices in the blue region of the spectrum.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L1084