Si-Fullerene Compounds Produced by Controlling Spatial Structure of an Arc-Discharge Plasma

Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radio-frequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes S...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000-11, Vol.39 (11B), p.L1130
Main Authors: Hirata, Takamichi, Motegi, Noriyuki, Hatakeyama, Rikizo, Oku, Takeo, Mieno, Tetsu, Sato, Naoyuki, Mase, Hiroshi, Niwano, Michio, Miyamoto, Nobuo, Sato, Noriyoshi
Format: Article
Language:English
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Summary:Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radio-frequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes Si@C n ( n =74, 86, etc.). The soot structure analyses with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be Si@C n , and carbon nanocapsules filled with SiC.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L1130