Single Photon Detection with a Quantum Dot Transistor

We propose and demonstrate a type of GaAs/AlGaAs modulation-doped field effect transistor (FET) which is sensitive to single photons. The FET contains a layer of InAs quantum dots formed using an in-situ , self-organising method, adjacent to the channel and separated from it by a thin AlGaAs barrier...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-03, Vol.40 (3S), p.2058
Main Authors: Shields, Andrew J., O'Sullivan, Martin P., Farrer, Ian, Ritchie, David A., Leadbeater, Mark L., Patel, Nalin K., Hogg, Richard A., Norman, Carl E., Curson, Neil J., Pepper, Michael
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose and demonstrate a type of GaAs/AlGaAs modulation-doped field effect transistor (FET) which is sensitive to single photons. The FET contains a layer of InAs quantum dots formed using an in-situ , self-organising method, adjacent to the channel and separated from it by a thin AlGaAs barrier. Capture of a single photo-excited carrier by a quantum dot leads to a sizeable change in the source-drain current through the transistor, allowing the detection of a single photon. We show this is because the mobility of the electron channel is extremely sensitive to the charge trapped in the dots. This discovery may allow a new type of single photon detector to be developed which does not rely upon avalanche processes.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.2058